Invention Grant
US08804456B1 Delay locked loop (DLL) system for a memory device with wide operating frequency via a variable supply applied to a delay line 有权
通过应用于延迟线的可变电源,为具有较宽工作频率的存储器件提供延迟锁定环(DLL)系统

  • Patent Title: Delay locked loop (DLL) system for a memory device with wide operating frequency via a variable supply applied to a delay line
  • Patent Title (中): 通过应用于延迟线的可变电源,为具有较宽工作频率的存储器件提供延迟锁定环(DLL)系统
  • Application No.: US13853032
    Application Date: 2013-03-28
  • Publication No.: US08804456B1
    Publication Date: 2014-08-12
  • Inventor: John T. Phan
  • Applicant: Nanya Technology Corp.
  • Applicant Address: TW Kueishan, Tao-Yuan Hsien
  • Assignee: Nanya Technology Corp.
  • Current Assignee: Nanya Technology Corp.
  • Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
  • Agent Winston Hsu; Scott Margo
  • Main IPC: G11C8/18
  • IPC: G11C8/18 H03L7/06
Delay locked loop (DLL) system for a memory device with wide operating frequency via a variable supply applied to a delay line
Abstract:
A DLL system in a memory device with wide frequency application includes: a clock receiver that generates a clock for the DLL system; a delay line, coupled to the clock receiver, for receiving the generated clock and delaying the clock according to a received power supply; a power regulator, for generating the power supply to the DLL delay line according to a bias; a control logic, coupled to the clock receiver, for generating a plurality of logic signals respectively corresponding to a plurality of frequency ranges of the clock; and a bias generator, coupled between the control logic and the power regulator, for providing the bias to the power regulator, wherein the value of the bias is according to a logic signal output by the control logic.
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