Invention Grant
- Patent Title: Method for removing polishing byproducts and polishing device
- Patent Title (中): 去除抛光副产物和抛光装置的方法
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Application No.: US13308526Application Date: 2011-11-30
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Publication No.: US08808063B2Publication Date: 2014-08-19
- Inventor: Feng Chen , Mingqi Li
- Applicant: Feng Chen , Mingqi Li
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201110145429 20110531
- Main IPC: B24B21/18
- IPC: B24B21/18

Abstract:
A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.
Public/Granted literature
- US20120309278A1 METHOD FOR REMOVING POLISHING BYPRODUCTS AND POLISHING DEVICE Public/Granted day:2012-12-06
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