Invention Grant
- Patent Title: Film deposition apparatus and substrate process apparatus
- Patent Title (中): 薄膜沉积装置和基板处理装置
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Application No.: US12539642Application Date: 2009-08-12
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Publication No.: US08808456B2Publication Date: 2014-08-19
- Inventor: Hitoshi Kato , Manabu Honma
- Applicant: Hitoshi Kato , Manabu Honma
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-222738 20080829; JP2008-222747 20080829
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/677 ; C23C16/40 ; H01L21/67
Abstract:
A disclosed film deposition apparatus has a separation gas supplying nozzle between reaction gas nozzles arranged away from each other in a rotation direction of a turntable on which a substrate is placed, and a ceiling member providing a lower ceiling surface on both sides of the separation gas supplying nozzle. In this film deposition apparatus, the separation gas supplying nozzle and the reaction gas nozzles are removably arranged along a circumferential direction of a chamber, and the ceiling member is removably attached on a ceiling plate of the chamber.
Public/Granted literature
- US20100050942A1 FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESS APPARATUS Public/Granted day:2010-03-04
Information query
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