Invention Grant
- Patent Title: Method of manufacturing substrate for liquid discharge head
- Patent Title (中): 液体排出头用基板的制造方法
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Application No.: US13379192Application Date: 2010-07-29
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Publication No.: US08808555B2Publication Date: 2014-08-19
- Inventor: Keiji Watanabe , Shuji Koyama , Hiroyuki Abo , Keiji Matsumoto
- Applicant: Keiji Watanabe , Shuji Koyama , Hiroyuki Abo , Keiji Matsumoto
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2009-202735 20090902
- International Application: PCT/JP2010/063234 WO 20100729
- International Announcement: WO2011/027645 WO 20110310
- Main IPC: B41J2/16
- IPC: B41J2/16 ; B44C1/22 ; B41J2/14

Abstract:
Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.
Public/Granted literature
- US20120097637A1 METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD Public/Granted day:2012-04-26
Information query
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