Invention Grant
- Patent Title: Pattern forming method
- Patent Title (中): 图案形成方法
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Application No.: US13951861Application Date: 2013-07-26
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Publication No.: US08808557B1Publication Date: 2014-08-19
- Inventor: Yuriko Seino , Hiroki Yonemitsu
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2013-030319 20130219
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
In one embodiment, a pattern forming method includes forming a physical guide that includes a first pattern in a first region and a second pattern in a second region on an underlying film, embedding a polymer material into a concave portion of the physical guide, microphase-separating the polymer material, to form a self-assembly pattern having a first and a second polymer sections, observing the self-assembly pattern in the second region, to determine from an observation result whether or not the self-assembly pattern in the first region has a predetermined shape, and selectively removing the first polymer section in the case of determining that the self-assembly pattern in the first region has the predetermined shape. The second pattern includes a pattern with a larger coverage ratio than the first pattern and a pattern with a smaller coverage ratio than the first pattern.
Public/Granted literature
- US20140231380A1 PATTERN FORMING METHOD Public/Granted day:2014-08-21
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