Invention Grant
US08808573B2 Compositions and methods for selective polishing of silicon nitride materials 有权
用于氮化硅材料的选择性抛光的组合物和方法

  • Patent Title: Compositions and methods for selective polishing of silicon nitride materials
  • Patent Title (中): 用于氮化硅材料的选择性抛光的组合物和方法
  • Application No.: US13087857
    Application Date: 2011-04-15
  • Publication No.: US08808573B2
    Publication Date: 2014-08-19
  • Inventor: William Ward
  • Applicant: William Ward
  • Applicant Address: US IL Aurora
  • Assignee: Cabot Microelectronics Corporation
  • Current Assignee: Cabot Microelectronics Corporation
  • Current Assignee Address: US IL Aurora
  • Agent Thomas E Omholt; Robert J Ross; Steven D Weseman
  • Main IPC: C09K13/08
  • IPC: C09K13/08
Compositions and methods for selective polishing of silicon nitride materials
Abstract:
The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, comprises about 0.01 to about 2 percent by weight of a particulate calcined ceria abrasive, about 10 to about 1000 ppm of at least one cationic polymer, optionally, about 10 to about 2000 ppm of a polyoxyalkylene polymer; and an aqueous carrier therefor. The at least one cationic polymer is selected from a poly(vinylpyridine) polymer and a combination of a poly(vinylpyridine) polymer and a quaternary ammonium-substituted polymer. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.
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