Invention Grant
- Patent Title: Method for integrated circuit diagnosis
- Patent Title (中): 集成电路诊断方法
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Application No.: US13935726Application Date: 2013-07-05
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Publication No.: US08809074B2Publication Date: 2014-08-19
- Inventor: Mark J. Williamson , Gurtej S. Sandhu , Justin R. Arrington
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
A method provides a mechanism to examine physical properties and/or diagnose problems at a selected location of an integrated circuit. Such a method can include creating a layer of a reactive material a selected distance above and in proximity with a surface of the integrated circuit so that the reactive material can be evaluated to form chemical radicals above and in proximity to the surface of the integrated circuit. A portion of the reactive material can be excited. A portion of the surface of the integrated circuit can be removed to a selected level to evaluate an exposed electrical structure of the integrated circuit. The exposed electrical structure can be evaluated to determine a potential problem in the integrated circuit.
Public/Granted literature
- US20130295700A1 METHOD FOR INTEGRATED CIRCUIT DIAGNOSIS Public/Granted day:2013-11-07
Information query
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