In a method of manufacturing of a semiconductor device according to an embodiment, an inspection transistor is subjected to silicidation and subsequently a characteristic of the inspection transistor is measured after the inspection transistor and a product transistor on a substrate are subjected to an annealing process. Thereafter, based on the measured characteristic, a characteristic adjustment annealing process to make a characteristic of the product transistor close to a desired characteristic is performed, and then the product transistor is subjected to silicidation.