Invention Grant
- Patent Title: Method of manufacturing light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US13787748Application Date: 2013-03-06
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Publication No.: US08809083B2Publication Date: 2014-08-19
- Inventor: Lung-Hsin Chen , Wen-Liang Tseng
- Applicant: Advanced Optoelectronic Technology, Inc.
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee: Advanced Optoelectronics Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210064643 20120313
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/52 ; H01L33/00

Abstract:
A method of manufacturing a light emitting diode (LED) comprising: providing a porous carrier, a base disposed on the carrier and a plurality of light emitting elements mounted on the base, wherein the carrier defines a plurality of micro through-holes extending through a first face to a second face of the carrier, and the base has electrical structures formed thereon electrically connecting to the light emitting elements, respectively; providing a mold to receive the carrier therein and distributing a phosphor glue on the base to cover the light emitting elements, and the mold defining an air outlet communicated with the through-holes of the carrier; vacuuming the mold via the air outlet to flatten an outer face of the phosphor glue; heating the phosphor glue and removing the mold; and removing the carrier.
Public/Granted literature
- US20130244358A1 METHOD OF MANUFACTURING LIGHT EMITTING DIODE Public/Granted day:2013-09-19
Information query
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