Invention Grant
- Patent Title: Back side defect reduction for back side illuminated image sensor
- Patent Title (中): 背面照明图像传感器的背面缺陷减少
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Application No.: US14088596Application Date: 2013-11-25
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Publication No.: US08809098B2Publication Date: 2014-08-19
- Inventor: Chun-Chieh Chuang , Dun-Nian Yaung , Yeur-Luen Tu , Jen-Cheng Liu , Keng-Yu Chou , Chung Chien Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystallized silicon layer is formed on the back side of the substrate. The recrystallized silicon layer has different photoluminescence intensity than the substrate.
Public/Granted literature
- US20140073080A1 Back Side Defect Reduction for Back Side Illuminated Image Sensor Public/Granted day:2014-03-13
Information query
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