Invention Grant
- Patent Title: Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
- Patent Title (中): 使用选择性生长的可逆电阻切换元件的存储单元及其形成方法
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Application No.: US13964157Application Date: 2013-08-12
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Publication No.: US08809114B2Publication Date: 2014-08-19
- Inventor: April D. Schricker , S. Brad Herner , Mark H. Clark
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A method of forming a memory cell is provided that includes forming a steering element above a substrate, forming a material layer on the substrate, patterning and etching the material layer, and oxidizing the patterned and etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
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