Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13224529Application Date: 2011-09-02
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Publication No.: US08809136B2Publication Date: 2014-08-19
- Inventor: Toshihiro Ohki
- Applicant: Toshihiro Ohki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-018502 20080130
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/66 ; H01L29/778
Abstract:
A semiconductor device having a source electrode and a drain electrode formed over a semiconductor substrate, a gate electrode formed over the semiconductor substrate and disposed between the source electrode and the drain electrode, a protection film made of an insulating material and formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, and a gate side opening formed at least in one of a portion of the protection film-between the source electrode and the gate electrode and a portion of the protection film between the drain electrode and the gate electrode and disposed away from all of the gate electrode, the source electrode and the drain electrode.
Public/Granted literature
- US20110318892A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-12-29
Information query
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