Invention Grant
- Patent Title: Growing compressively strained silicon directly on silicon at low temperatures
- Patent Title (中): 在低温下直接在硅上生长压缩应变硅
-
Application No.: US13037944Application Date: 2011-03-01
-
Publication No.: US08809168B2Publication Date: 2014-08-19
- Inventor: Stephen W. Bedell , Bahman Hekmatshoartabari , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: Stephen W. Bedell , Bahman Hekmatshoartabari , Alexander Reznicek , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Louis J. Percello
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/02
Abstract:
Compressively strained silicon is epitaxially grown directly onto a silicon substrate at low temperature using hydrogen to engineer the strain level. Hydrogen dilution may be varied during such growth to provide a strain gradient.
Public/Granted literature
- US20120205784A1 GROWING COMPRESSIVELY STRAINED SILICON DIRECTLY ON SILICON AT LOW TEMPERATURES Public/Granted day:2012-08-16
Information query
IPC分类:
