Invention Grant
- Patent Title: Multi-layer pattern for alternate ALD processes
- Patent Title (中): 用于替代ALD过程的多层模式
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Application No.: US13250937Application Date: 2011-09-30
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Publication No.: US08809169B2Publication Date: 2014-08-19
- Inventor: David L. O'Meara , Aelan Mosden
- Applicant: David L. O'Meara , Aelan Mosden
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/033

Abstract:
A method of patterning a substrate. A sacrificial film is formed over a substrate and a pattern created therein. A first spacer layer is conformally deposited over the patterned sacrificial film and at least one horizontal portion of the first spacer layer is removed while vertical portions of the first spacer layer remain. A second spacer layer is conformally deposited over the patterned sacrificial film and the remaining portions of the first spacer layer. At least one horizontal portion of the second spacer layer is removed while vertical portions of the second spacer layer remain. Conformal deposition of the first and second spacer layers is optionally repeated one or more times. Conformal deposition of the first layer is optionally repeated. Then, one of the first or second spacer layers is removed while substantially leaving the vertical portions of the remaining one of the first or second spacer layers.
Public/Granted literature
- US20130084688A1 MULTI-LAYER PATTERN FOR ALTERNATE ALD PROCESSES Public/Granted day:2013-04-04
Information query
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