MOSFET gate and source/drain contact metallization

Invention Grant

US08809174B2 MOSFET gate and source/drain contact metallization 有权

Title translation: MOSFET栅极和源极/漏极接触金属化

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Patent Title: MOSFET gate and source/drain contact metallization
Patent Title (中): MOSFET栅极和源极/漏极接触金属化
Application No.: US14043848

Application Date: 2013-10-02
Publication No.: US08809174B2

Publication Date: 2014-08-19
Inventor: Soon-Cheon Seo , Bruce B. Doris , Chih-Chao Yang
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machiness Corporation
Current Assignee: International Business Machiness Corporation
Current Assignee Address: US NY Armonk
Agent Louis J. Percello; Robert M. Trepp
Main IPC: H01L21/3205
IPC: H01L21/3205

MOSFET gate and source/drain contact metallization

Abstract:

A MOSFET is described incorporating a common metal process to make contact to the source, drain and the metal gate respectively which may be formed concurrently with the same metal or metals.

Abstract(Chinese):

描述了一种MOSFET，其结合了公共金属工艺以分别与可能与相同金属或金属同时形成的源极，漏极和金属栅极接触。

Public/Granted literature

US20140027865A1 MOSFET GATE AND SOURCE/DRAIN CONTACT METALLIZATION Public/Granted day:2014-01-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）