Invention Grant
US08809194B2 Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etch
有权
在隔离物侧壁上形成含SiOCl的层，以防止间隔物蚀刻期间的CD损失
- Patent Title: Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etch
- Patent Title (中): 在隔离物侧壁上形成含SiOCl的层，以防止间隔物蚀刻期间的CD损失
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Application No.: US13413915Application Date: 2012-03-07
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Publication No.: US08809194B2Publication Date: 2014-08-19
- Inventor: Alok Ranjan , Kaushik Arun Kumar
- Applicant: Alok Ranjan , Kaushik Arun Kumar
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/033 ; H01L21/3065 ; H01L21/308
Abstract:
A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from the gate structure and the substrate, while retaining a sidewall spacer positioned along a sidewall of the gate structure. The spacer etch process sequence may include depositing a SiOCl-containing layer on an exposed surface of the spacer material to form a spacer protection layer.
Public/Granted literature
- US20130237059A1 FORMATION OF SiOCl-CONTAINING LAYER ON SPACER SIDEWALLS TO PREVENT CD LOSS DURING SPACER ETCH Public/Granted day:2013-09-12
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