A method for transferring a feature pattern to a thin film on a substrate is described. The method comprises disposing a substrate comprising one or more mask layers overlying a thin film in a plasma processing system, and forming a feature pattern in the one or more mask layers. The method further comprises transferring the feature pattern in the one or more mask layers to the thin film by: performing a first plasma etching process at a first pressure less than about 80 mtorr, and performing a second plasma etching process at a second pressure greater than about 80 mtorr.