Invention Grant
- Patent Title: Plasma etching apparatus and control method
- Patent Title (中): 等离子体蚀刻装置及控制方法
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Application No.: US14013128Application Date: 2013-08-29
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Publication No.: US08809197B2Publication Date: 2014-08-19
- Inventor: Atsuhiko Tabuchi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-188913 20120829
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
In a control method, a first processing is performed on an object to be processed by controlling a temperature of a base to a first temperature and controlling a temperature of an electrostatic chuck that is disposed on a mounting surface of the base so as to mount thereon the object to be processed and has a heater installed therein to a second temperature. A second processing is performed on the object by controlling a temperature of the base to a third temperature and controlling a temperature of the electrostatic chuck to a fourth temperature by a heater. In the control method, a difference between the first temperature and the second temperature and a difference between the third temperature and the fourth temperature are within a tolerable temperature of the junction layer for bonding the base and the electrostatic chuck.
Public/Granted literature
- US20140073066A1 PLASMA ETCHING APPARATUS AND CONTROL METHOD Public/Granted day:2014-03-13
Information query
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