Invention Grant
- Patent Title: Nano-crystal etch process
- Patent Title (中): 纳米晶体蚀刻工艺
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Application No.: US12650029Application Date: 2009-12-30
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Publication No.: US08809198B2Publication Date: 2014-08-19
- Inventor: Ramakanth Alapati , Paul Morgan , Max Hineman
- Applicant: Ramakanth Alapati , Paul Morgan , Max Hineman
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
Public/Granted literature
- US20100105211A1 NANO-CRYSTAL ETCH PROCESS Public/Granted day:2010-04-29
Information query
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