A method of manufacturing a structure includes a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a basic etching mask corresponding to a target shape and having at least a first structure with a projecting corner and a second structure adjoining the first structure with an opening intervening therebetween, and a correction etching mask extending from the projecting corner of an etching mask of the first structure and connected to an etching mask of the second structure, and a second step of performing anisotropic etching of the monocrystal silicon substrate having the basic etching mask and the correction etching mask to form the target shape.