Invention Grant
- Patent Title: Method of forming metal oxide film and metal oxide film
- Patent Title (中): 形成金属氧化物膜和金属氧化物膜的方法
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Application No.: US13258323Application Date: 2010-03-23
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Publication No.: US08809201B2Publication Date: 2014-08-19
- Inventor: Satoshi Naganawa , Takeshi Kondo
- Applicant: Satoshi Naganawa , Takeshi Kondo
- Applicant Address: JP Tokyo
- Assignee: Lintec Corporation
- Current Assignee: Lintec Corporation
- Current Assignee Address: JP Tokyo
- Agent Gerald E Hespos; Michael J Porco; Matthew T Hespos
- Priority: JP2009-077304 20090326
- International Application: PCT/JP2010/054982 WO 20100323
- International Announcement: WO2010/110264 WO 20100930
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; C01G15/00 ; C03C17/25 ; C01G9/02 ; C23C8/02 ; C01G23/04 ; C01G9/00 ; C03C17/27
Abstract:
The present invention provides; a method for forming a metal oxide film which has both a surface irregularity and a predetermined pattern or either and has few unevenness of surface specific resistance, light transmittance and the like, and such the metal oxide film.The method for forming a metal oxide film having both a surface irregularity and a predetermined pattern or either on a substrate, wherein, the method comprises a first process in which a liquid material containing a metal salt is applied on the substrate to form a metal salt film, a second process in which a surface irregularity or a predetermined pattern is formed to the metal salt film, and a third process in which the metal salt film is converted to a metal oxide film by thermal oxidation treatment or plasma oxidation treatment.
Public/Granted literature
- US20120034423A1 METHOD OF FORMING METAL OXIDE FILM AND METAL OXIDE FILM Public/Granted day:2012-02-09
Information query
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