A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2ΔT) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2ΔT) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate surface and tilted by a tilt angle about a second axis lying parallel to the substrate surface, in such a way that a dislocation network is present in the region of the boundary surface.