Invention Grant
- Patent Title: Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
- Patent Title (中): 电镀CIGS光伏器件的背面电极配置及其制造方法
-
Application No.: US13455317Application Date: 2012-04-25
-
Publication No.: US08809674B2Publication Date: 2014-08-19
- Inventor: Alexey Krasnov , Willem Den Boer
- Applicant: Alexey Krasnov , Willem Den Boer
- Applicant Address: US MI Auburn Hills
- Assignee: Guardian Industries Corp.
- Current Assignee: Guardian Industries Corp.
- Current Assignee Address: US MI Auburn Hills
- Agency: Nixon & Vanderhye P.C.
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
A back contact configuration for a CIGS-type photovoltaic device is provided. The back contact configuration includes an interfacial seed layer, made up of one or more layers/sublayers, disposed between a Mo based rear contact/electrode and a CIGS inclusive semiconductor absorber. The interfacial seed layer may be of or include one or more element(s) that make up, or help make up, the CIGS inclusive semiconductor absorber. Various methods and compositions of the interfacial seed layer are disclosed, including a seed layer comprising metallic and/or substantially metallic Cu—In—Ga, CIGS, and/or a stack of alternating layers of or including Cu, In and Ga. Methods for making the back contact configuration, including an interfacial seed layer, are also provided.
Public/Granted literature
- US20130284246A1 BACK ELECTRODE CONFIGURATION FOR ELECTROPLATED CIGS PHOTOVOLTAIC DEVICES AND METHODS OF MAKING SAME Public/Granted day:2013-10-31
Information query
IPC分类:
