A memory element and a memory device having the stable switching characteristics with the characteristics of data retention remaining favorable are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes an ion source layer provided on the second electrode side, a resistance change layer provided between the ion source layer and the first electrode, and a barrier layer provided between the resistance change layer and the first electrode, and having conductivity higher than that of the resistance change layer.