Invention Grant
- Patent Title: Light emitting diode and method of fabricating the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US13115084Application Date: 2011-05-24
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Publication No.: US08809892B2Publication Date: 2014-08-19
- Inventor: Do Hyung Kim , Chung-Hoon Lee
- Applicant: Do Hyung Kim , Chung-Hoon Lee
- Applicant Address: KR Seoul
- Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2005-0059736 20050704
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/50 ; H01L33/54
Abstract:
The present invention relates to a light emitting diode and a method of fabricating the same, wherein the distance between a fluorescent substance and a light emitting diode chip is uniformly maintained to enhance luminous efficiency. To this end, there is provided a light emitting diode comprising at least one light emitting diode chip, lead terminals for use in applying electric power to the light emitting diode chip, and a frame that is used for mounting the light emitting diode chip thereon and is formed to have a predetermined height and a shape corresponding to that of the light emitting diode chip.
Public/Granted literature
- US20110227123A1 Light Emitting Diode and Method of Fabricating the Same Public/Granted day:2011-09-22
Information query
IPC分类:
