Invention Grant
- Patent Title: Epitaxial base layers for heterojunction bipolar transistors
- Patent Title (中): 用于异质结双极晶体管的外延基极层
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Application No.: US13910710Application Date: 2013-06-05
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Publication No.: US08809912B2Publication Date: 2014-08-19
- Inventor: Paul Douglas Yoder , Munmun Islam , Mahbub D. Satter
- Applicant: Paul Douglas Yoder , Munmun Islam , Mahbub D. Satter
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Troutman Sanders LLP
- Agent Ryan A. Schneider; Dustin B. Weeks
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/737 ; H01L29/10 ; H01L29/15 ; H01L29/66 ; H01L29/20
Abstract:
An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the emitter and collector. The base can comprise a plurality of alternating type-I and type-II layers arranged to form a short period super lattice. The type-I layers can have a band-gap that is narrower than the band-gap of the type-II layers. At least one of the type-I layers and the type-II layers can consist essentially of a quaternary material.
Public/Granted literature
- US20130320403A1 Epitaxial Base Layers For Heterojunction Bipolar Transistors Public/Granted day:2013-12-05
Information query
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