Invention Grant
- Patent Title: Transistor component having an amorphous channel control layer
- Patent Title (中): 具有非晶体沟道控制层的晶体管组件
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Application No.: US12486461Application Date: 2009-06-17
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Publication No.: US08809949B2Publication Date: 2014-08-19
- Inventor: Gerhard Schmidt
- Applicant: Gerhard Schmidt
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Disclosed is a semiconductor component, including: a drift zone arranged between a first and a second connection zone; a channel control layer of an amorphous semi-insulating material arranged adjacent to the drift zone.
Public/Granted literature
- US20100320535A1 TRANSISTOR COMPONENT HAVING AN AMORPHOUS CHANNEL CONTROL LAYER Public/Granted day:2010-12-23
Information query
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