A static random access memory (SRAM) cell includes a straight fin and a bended fin physically disconnected from the straight fin. The bended fin has a first portion and a second portion parallel to the straight fin. The distance between the first portion of the bended fin and the straight fin is smaller than the distance between the second portion of the bended fin and the straight fin. The SRAM cell includes a pull-down transistor including a portion of a first gate strip, which forms a first and a second sub pull-down transistor with the straight fin and the first portion of the bended fin, respectively. The SRAM cell further includes a pass-gate transistor including a portion of a second gate strip, which forms a first sub pass-gate transistor with the straight fin. The pull-down transistor includes more fins than the pass-gate transistor.