Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same

Invention Grant

US08809991B2 Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same 有权

Title translation: 包括双极晶体管，CMOS晶体管和DMOS晶体管的半导体器件及其制造方法

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Patent Title: Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same
Patent Title (中): 包括双极晶体管，CMOS晶体管和DMOS晶体管的半导体器件及其制造方法
Application No.: US13707268

Application Date: 2012-12-06
Publication No.: US08809991B2

Publication Date: 2014-08-19
Inventor: Sung Kun Park
Applicant: SK hynix Inc.
Applicant Address: KR Gyeonggi-do
Assignee: SK Hynix Inc.
Current Assignee: SK Hynix Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: William Park & Associates Patent Ltd.
Priority: KR10-2012-0011487 20120203
Main IPC: H01L21/8232
IPC: H01L21/8232 ; H01L27/088

Semiconductor devices including bipolar transistors, CMOS transistors and DMOS transistors, and methods of manufacturing the same

Abstract:

Semiconductor devices having a bipolar transistor, a CMOS transistor, a drain extension MOS transistor and a double diffused MOS transistor are provided. The semiconductor device includes a semiconductor substrate including a logic region in which a logic device is formed and a high voltage region in which a high power device is formed, trenches in the semiconductor substrate, isolation layers in respective ones of the trenches, and at least one field insulation layer disposed at a surface of the semiconductor substrate in the high voltage region. Related methods are also provided.

Abstract(Chinese):

提供具有双极晶体管，CMOS晶体管，漏极延伸MOS晶体管和双扩散MOS晶体管的半导体器件。半导体器件包括：半导体衬底，包括其中形成逻辑器件的逻辑区域和形成高功率器件的高电压区域，半导体衬底中的沟槽，各个沟槽中的隔离层，至少一个场绝缘层设置在高电压区域的半导体衬底的表面。还提供了相关方法。

Public/Granted literature

US20130200453A1 SEMICONDUCTOR DEVICES INCLUDING BIPOLAR TRANSISTORS, CMOS TRANSISTORS AND DMOS TRANSISTORS, AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2013-08-08

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺