An e-fuse structure includes a first doped region and a second doped region formed in a substrate. The first doped region has a first conductivity type and the second doped region has a second conductivity type different from the first conductivity type. The first and second doped regions contact each other. A conductive pattern is disposed on the first and second doped regions and contacts the first and second doped regions. A first contact plug is disposed on the conductive pattern in an area corresponding to the first doped region, and a second contact plug is disposed on the conductive pattern in an area corresponding to the second doped region.