Invention Grant
- Patent Title: Semiconductor device comprising capacitive element
- Patent Title (中): 包括电容元件的半导体器件
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Application No.: US12864091Application Date: 2009-01-22
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Publication No.: US08810000B2Publication Date: 2014-08-19
- Inventor: Ippei Kume , Naoya Inoue , Yoshihiro Hayashi
- Applicant: Ippei Kume , Naoya Inoue , Yoshihiro Hayashi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-011210 20080122
- International Application: PCT/JP2009/050937 WO 20090122
- International Announcement: WO2009/093633 WO 20090730
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A capacitive element formed within a semiconductor device comprises an upper electrode, a capacitive insulating film containing an oxide and/or silicate of a transition metal element, and a lower electrode having a polycrystalline conductive film composed of a material having higher oxidation resistance than the transition metal element and an amorphous or microcrystalline conductive film formed below the polycrystalline conductive film.
Public/Granted literature
- US20100327409A1 SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT Public/Granted day:2010-12-30
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