Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13719099Application Date: 2012-12-18
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Publication No.: US08810010B2Publication Date: 2014-08-19
- Inventor: Jae Bum Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0095894 20120830
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/48 ; H01L21/48
Abstract:
An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via.
Public/Granted literature
- US20140061874A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-03-06
Information query
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