Invention Grant
US08810016B2 Semiconductor device, substrate and semiconductor device manufacturing method
有权
半导体器件，衬底和半导体器件的制造方法
- Patent Title: Semiconductor device, substrate and semiconductor device manufacturing method
- Patent Title (中): 半导体器件，衬底和半导体器件的制造方法
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Application No.: US13036869Application Date: 2011-02-28
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Publication No.: US08810016B2Publication Date: 2014-08-19
- Inventor: Yasumasa Kasuya , Motoharu Haga , Hiroaki Matsubara
- Applicant: Yasumasa Kasuya , Motoharu Haga , Hiroaki Matsubara
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2005-165800 20050606; JP2005-266004 20050913
- Main IPC: H01L23/495
- IPC: H01L23/495
Abstract:
The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane.
Public/Granted literature
- US20110140256A1 SEMICONDUCTOR DEVICE, SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2011-06-16
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