Invention Grant
- Patent Title: MEMS device with stress isolation and method of fabrication
- Patent Title (中): 具有应力隔离的MEMS器件和制造方法
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Application No.: US13365454Application Date: 2012-02-03
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Publication No.: US08810030B2Publication Date: 2014-08-19
- Inventor: Aaron A. Geisberger
- Applicant: Aaron A. Geisberger
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Schmeiser, Olsen & Watts LLP
- Agent Lowell W. Gresham; Charlene R. Jacobsen
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A MEMS device (20) with stress isolation includes elements (28, 30, 32) formed in a first structural layer (24) and elements (68, 70) formed in a second structural layer (26), with the layer (26) being spaced apart from the first structural layer (24). Fabrication methodology (80) entails forming (92, 94, 104) junctions (72, 74) between the layers (24, 26). The junctions (72, 74) connect corresponding elements (30, 32) of the first layer (24) with elements (68, 70) of the second layer (26). The fabrication methodology (80) further entails releasing the structural layers (24, 26) from an underlying substrate (22) so that all of the elements (30, 32, 68, 70) are suspended above the substrate (22) of the MEMS device (20), wherein attachment of the elements (30, 32, 68, 70) with the substrate (22) occurs only at a central area (46) of the substrate (22).
Public/Granted literature
- US20120126345A1 MEMS DEVICE WITH STRESS ISOLATION AND METHOD OF FABRICATION Public/Granted day:2012-05-24
Information query
IPC分类:
