Invention Grant
- Patent Title: Semiconductor bonding structure body and manufacturing method of semiconductor bonding structure body
- Patent Title (中): 半导体结合体和半导体结合体的制造方法
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Application No.: US13823463Application Date: 2011-10-17
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Publication No.: US08810035B2Publication Date: 2014-08-19
- Inventor: Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
- Applicant: Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2010-237514 20101022
- International Application: PCT/JP2011/005790 WO 20111017
- International Announcement: WO2012/053178 WO 20120426
- Main IPC: H01L23/00
- IPC: H01L23/00 ; B23K35/26 ; H01L21/56 ; B23K35/30 ; C22C5/02 ; C22C13/00 ; C22C5/06 ; B23K35/02 ; B23K1/00 ; C22C9/00 ; C22C1/04
Abstract:
A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
Public/Granted literature
- US20130241069A1 SEMICONDUCTOR BONDING STRUCTURE BODY AND MANUFACTURING METHOD OF SEMICONDUCTOR BONDING STRUCTURE BODY Public/Granted day:2013-09-19
Information query
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