Invention Grant
US08810036B2 Semiconductor device and method forming patterns with spaced pads in trim region
有权
半导体器件和方法在修剪区域中形成具有间隔垫的图案
- Patent Title: Semiconductor device and method forming patterns with spaced pads in trim region
- Patent Title (中): 半导体器件和方法在修剪区域中形成具有间隔垫的图案
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Application No.: US13604723Application Date: 2012-09-06
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Publication No.: US08810036B2Publication Date: 2014-08-19
- Inventor: Jin-Ho Min , Ki-Jeong Kim , Kyoung-Sub Shin , Dong-Hyun Kim
- Applicant: Jin-Ho Min , Ki-Jeong Kim , Kyoung-Sub Shin , Dong-Hyun Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0111411 20111028
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L23/528 ; H01L27/32
Abstract:
In a semiconductor device, parallel first and second conductive lines having a unit width extend from a memory cell region into a connection region. A trim region in the connection region includes pads respectively connected to the first and second conductive lines but are separated by a width much greater than the unit width.
Public/Granted literature
- US20130105983A1 SEMICONDUCTOR DEVICE AND METHOD FORMING PATTERNS WITH SPACED PADS IN TRIM REGION Public/Granted day:2013-05-02
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