Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13667955Application Date: 2012-11-02
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Publication No.: US08810042B2Publication Date: 2014-08-19
- Inventor: Yasutaka Nakashiba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-102278 20090420
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes a semiconductor chip having a multilayer interconnect, a first spiral inductor and a second spiral inductor formed in the multilayer interconnect, and an interconnect substrate formed over the semiconductor chip and having a third spiral inductor and a fourth spiral inductor. The third spiral inductor overlaps the first spiral inductor in a plan view. The fourth spiral inductor overlaps the second spiral inductor in the plan view. The third spiral inductor and the fourth spiral inductor collectively include a line, the line being spirally wound in a same direction in the third spiral inductor and the fourth spiral inductor.
Public/Granted literature
- US20130056849A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-03-07
Information query
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