Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13195325Application Date: 2011-08-01
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Publication No.: US08810043B2Publication Date: 2014-08-19
- Inventor: Takao Nishimura , Yoshikazu Kumagaya , Akira Takashima , Kouichi Nakamura , Kazuyuki Aiba
- Applicant: Takao Nishimura , Yoshikazu Kumagaya , Akira Takashima , Kouichi Nakamura , Kazuyuki Aiba
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-188887 20050628; JP2006-061759 20060307
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L23/498 ; H01L25/065
Abstract:
A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.
Public/Granted literature
- US20110278723A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-11-17
Information query
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