Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12588360Application Date: 2009-10-13
-
Publication No.: US08810047B2Publication Date: 2014-08-19
- Inventor: Mitsuhisa Watanabe , Fumitomo Watanabe
- Applicant: Mitsuhisa Watanabe , Fumitomo Watanabe
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: McGinn IP Law Group, PLLC
- Priority: JPP2008-274253 20081024
- Main IPC: H01L23/29
- IPC: H01L23/29
Abstract:
A semiconductor device includes: a substrate having first and second surfaces, the first surface comprising first and second regions; a first semiconductor chip covering the first region; a first seal covering the second region and the first semiconductor chip; and a second seal covering the second surface.
Public/Granted literature
- US20100102438A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-04-29
Information query
IPC分类:
