Invention Grant
- Patent Title: 3D IC and 3D CIS structure
- Patent Title (中): 3D IC和3D CIS结构
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Application No.: US13622894Application Date: 2012-09-19
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Publication No.: US08810048B2Publication Date: 2014-08-19
- Inventor: Hsun-Chung Kuang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L27/088

Abstract:
An embodiment integrated circuit includes a first device supporting a first back end of line layer, the first back end of line layer including a first alignment marker, and a second device including a spin-on glass via and supporting a second back end of line layer, the second back end of line layer including a second alignment marker, the spin-on glass via permitting the second alignment marker to be aligned with the first alignment marker using ultraviolet light.
Public/Granted literature
- US20140077386A1 3D IC and 3D CIS Structure Public/Granted day:2014-03-20
Information query
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