Invention Grant
- Patent Title: HBAR resonator with a high level of integration
- Patent Title (中): HBAR谐振器具有较高的集成度
-
Application No.: US12995572Application Date: 2009-05-29
-
Publication No.: US08810106B2Publication Date: 2014-08-19
- Inventor: Sylvain Ballandras , Dorian Gachon
- Applicant: Sylvain Ballandras , Dorian Gachon
- Applicant Address: FR Paris FR Besancon
- Assignee: Centre National de la Recherche Scientifique (C.N.R.S.),Universite de Franche Comte
- Current Assignee: Centre National de la Recherche Scientifique (C.N.R.S.),Universite de Franche Comte
- Current Assignee Address: FR Paris FR Besancon
- Agency: McDermott Will & Emery LLP
- Priority: FR0853690 20080604
- International Application: PCT/FR2009/051023 WO 20090529
- International Announcement: WO2009/156667 WO 20091230
- Main IPC: H03H9/15
- IPC: H03H9/15

Abstract:
The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle θ2 are aligned, and the second cutting angle θ2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.
Public/Granted literature
- US20110210802A1 HBAR Resonator with a High Level of Integration Public/Granted day:2011-09-01
Information query