Invention Grant
- Patent Title: Light emitting element, light emitting device, and electronic device
- Patent Title (中): 发光元件,发光器件和电子器件
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Application No.: US13625323Application Date: 2012-09-24
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Publication No.: US08810125B2Publication Date: 2014-08-19
- Inventor: Kaoru Ikeda , Satoshi Seo
- Applicant: Kaoru Ikeda , Satoshi Seo
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-223217 20080901
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/52 ; H01L51/54 ; H01L51/00

Abstract:
An object is to improve luminous efficiency of a light emitting element using triplet exciton energy effectively. Another object is to reduce power consumption of a light emitting element, a light emitting device, and an electronic device. Triplet exciton energy generated in a light emitting layer which exhibits short wavelength fluorescence can be effectively utilized by use of a structure in which the light emitting layers which exhibit short wavelength fluorescence are sandwiched between light emitting layers each including a phosphorescent compound. Further, the emission balance can be improved between the light emitting layer including a phosphorescent compound and the light emitting layer which exhibits fluorescence by the devising of the structure of the light emitting layer which exhibits fluorescence.
Public/Granted literature
- US20130075782A1 Light Emitting Element, Light Emitting Device, and Electronic Device Public/Granted day:2013-03-28
Information query
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