Invention Grant
- Patent Title: Light-emitting device and method of manufacturing the same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US13721142Application Date: 2012-12-20
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Publication No.: US08810130B2Publication Date: 2014-08-19
- Inventor: Takeshi Fukunaga , Junya Maruyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-026879 20000203
- Main IPC: H01L51/00
- IPC: H01L51/00

Abstract:
To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
Public/Granted literature
- US20130112980A1 LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-05-09
Information query
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