Invention Grant
- Patent Title: Low leakage spare gates for integrated circuits
- Patent Title (中): 集成电路的低泄漏备用门
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Application No.: US13267142Application Date: 2011-10-06
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Publication No.: US08810280B2Publication Date: 2014-08-19
- Inventor: Rambabu Pyapali , Yongjun Zhang , Yongning Sheng
- Applicant: Rambabu Pyapali , Yongjun Zhang , Yongning Sheng
- Applicant Address: US CA Redwood Shores
- Assignee: Oracle International Corporation
- Current Assignee: Oracle International Corporation
- Current Assignee Address: US CA Redwood Shores
- Agency: Kraguljac Law Group, LLC
- Main IPC: H03K19/00
- IPC: H03K19/00
Abstract:
Devices, systems, methods, and other embodiments associated with spare gates are described. In one embodiment, a spare gate in an integrated circuit has a disconnected discharge path to minimize or eliminate current leakage.
Public/Granted literature
- US20130088261A1 LOW LEAKAGE SPARE GATES FOR INTEGRATED CIRCUITS Public/Granted day:2013-04-11
Information query
