Invention Grant
US08810303B2 Method and system for controlling HS-NMOS power switches with slew-rate limitation
有权
用于控制具有压摆率限制的HS-NMOS功率开关的方法和系统
- Patent Title: Method and system for controlling HS-NMOS power switches with slew-rate limitation
- Patent Title (中): 用于控制具有压摆率限制的HS-NMOS功率开关的方法和系统
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Application No.: US14057046Application Date: 2013-10-18
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Publication No.: US08810303B2Publication Date: 2014-08-19
- Inventor: Michael Brauer , Stephan Drebinger
- Applicant: Dialog Semiconductor GmbH
- Applicant Address: DE Kirchheim/Teck-Nabern
- Assignee: Dialog Semiconductor GmbH
- Current Assignee: Dialog Semiconductor GmbH
- Current Assignee Address: DE Kirchheim/Teck-Nabern
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Priority: EP10175672 20100907
- Main IPC: H03K17/04
- IPC: H03K17/04 ; H03K17/16 ; H03K5/01 ; H03K17/687

Abstract:
A method and system for limiting the slew rate of the output voltage of one or more high side (HS) NMOS power switches is disclosed. A circuit arrangement configured to control a first NMOS switch is described. The arrangement comprises voltage provisioning means configured to supply a gate voltage to a gate terminal of the first NMOS switch; current provisioning means configured to provide a current; a first control stage configured to provide and/or remove a connection between the gate terminal of the first NMOS switch and the voltage provisioning means, thereby switching the first NMOS switch to an on-state and/or an off-state, respectively; and a first feedback control link between an output terminal of the first NMOS switch and the current provisioning means configured to control the slew-rate of a voltage at the first output terminal.
Public/Granted literature
- US20140043077A1 Method and System for Controlling HS-NMOS Power Switches with Slew-Rate Limitation Public/Granted day:2014-02-13
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