Invention Grant
US08810973B2 Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
有权
电流垂直于采用半金属合金的平面磁阻传感器，以提高传感器性能
- Patent Title: Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
- Patent Title (中): 电流垂直于采用半金属合金的平面磁阻传感器，以提高传感器性能
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Application No.: US12119961Application Date: 2008-05-13
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Publication No.: US08810973B2Publication Date: 2014-08-19
- Inventor: Hardayal Singh Gill
- Applicant: Hardayal Singh Gill
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.
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