Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13615302Application Date: 2012-09-13
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Publication No.: US08811055B2Publication Date: 2014-08-19
- Inventor: Tae-Young Yoon
- Applicant: Tae-Young Yoon
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0094226 20110919
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C7/22

Abstract:
A memory device is provided. The memory device includes a first semiconductor chip including a memory element and a peripheral circuit configured to write or read data in or from the memory element; and a second semiconductor chip configured to perform an input/output function of data or signals exchanged between an external device and the first semiconductor chip.
Public/Granted literature
- US20130070507A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-03-21
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