Invention Grant
- Patent Title: Resistance change element, method for manufacturing the same, and semiconductor memory
- Patent Title (中): 电阻变化元件及其制造方法以及半导体存储器
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Application No.: US12511722Application Date: 2009-07-29
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Publication No.: US08811058B2Publication Date: 2014-08-19
- Inventor: Hideyuki Noshiro
- Applicant: Hideyuki Noshiro
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2008-199954 20080801
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; H01L27/24 ; G11C13/00
Abstract:
A resistance change element including a first electrode; a second electrode; and an oxide film, including an oxide of the first electrode, formed at sides of the first electrode and sandwiched between the first electrode and the second electrode in a plurality of regions, wherein at least one of the regions includes a resistance part whose resistance value changes in accordance with a voltage applied to the first and second electrodes.
Public/Granted literature
- US20100027319A1 RESISTANCE CHANGE ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MEMORY Public/Granted day:2010-02-04
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