Invention Grant
US08811072B2 Magnetoresistive random access memory (MRAM) package including a multilayer magnetic security structure
有权
包括多层磁性安全结构的磁阻随机存取存储器（MRAM）封装
- Patent Title: Magnetoresistive random access memory (MRAM) package including a multilayer magnetic security structure
- Patent Title (中): 包括多层磁性安全结构的磁阻随机存取存储器（MRAM）封装
-
Application No.: US13419109Application Date: 2012-03-13
-
Publication No.: US08811072B2Publication Date: 2014-08-19
- Inventor: Romney R. Katti , James L. Tucker , Anuj Kohli
- Applicant: Romney R. Katti , James L. Tucker , Anuj Kohli
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L23/00 ; G11C11/16
Abstract:
A magnetoresistive random access memory (MRAM) package may include an MRAM die, a package defining a cavity and an exterior surface, and a magnetic security structure disposed within the cavity or on the exterior surface of the package. The MRAM die may be disposed in the cavity of the package, and the magnetic security structure may include at least three layers including a permanent magnetic layer and a soft magnetic layer.
Public/Granted literature
- US20130241014A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) PACKAGE INCLUDING A MULTILAYER MAGNETIC SECURITY STRUCTURE Public/Granted day:2013-09-19
Information query
