Invention Grant
- Patent Title: Flash memory system and word line interleaving method thereof
- Patent Title (中): 闪存系统及其字线交错方法
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Application No.: US13236176Application Date: 2011-09-19
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Publication No.: US08811080B2Publication Date: 2014-08-19
- Inventor: Yongjune Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong
- Applicant: Yongjune Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0092586 20100920
- Main IPC: G11C11/06
- IPC: G11C11/06

Abstract:
Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
Public/Granted literature
- US20120069664A1 FLASH MEMORY SYSTEM AND WORD LINE INTERLEAVING METHOD THEREOF Public/Granted day:2012-03-22
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